2SD1979 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-voltage output amplification)

SMD Type
TransistIoCrs
Silicon NPN Epitaxial Planar Type
2SD1979
Features
Low on resistance ron.
High forward current transfer ratio hFE.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics Ta = 25
Parameter
Collector-emitter voltage
Base-emitter voltage
Collector-base cutoff current
Collector-emitter cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Rating
Unit
VCBO
50
V
VCEO
20
V
VEBO
25
V
IC
300
mA
ICP
500
mA
PC
150
mW
Tj
150
Tstg
-55 to +150
Symbol
Testconditons
VCEO IC = 1 mA, IB = 0
VBE VCE = 2 V, IC = 4 mA
ICBO VCB = 50 V, IE = 0
ICEO VEB = 25 V, IC = 0
hFE VCE = 2 V, IC = 4 mA
VCE(sat) IC = 30 mA, IB = 3 mA
fT VCB = 6 V, IE = -4 mA, f = 200 MHz
Cob VCB = 10 V, IE = 0, f = 1 MHz
1 Emitter
2 Base
3 Collector
Min Typ Max Unit
20
V
0.6
V
1 ìA
1 ìA
500
2500
0.1 V
80
MHz
4.5
pF
ON resistance
Ron
1
Ù
hFE Classification
Marking
Rank
hFE
3W
S
T
500 1500
800 2500
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