2SD1949 Datasheet, PDF (1/1 Pages) Rohm – Medium Power Transistor (50V, 0.5A)

SMD Type
Medium Power Transistor
2SD1949
TransistIoCrs
Features
High current.(IC=5A)
Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
50
V
VCEO
50
V
VEBO
5
V
IC
0.5
A
PC
0.2
W
Tj
150
Tstg
-55 to +150
1 Emitter
2 Base
3 Collector
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Output capacitance
Transition frequency
hFE Classification
Marking
Rank
hFE
Y
Q
R
120 270 180 390
Symbol
Testconditons
BVCBO IC=1mA
BVCEO VCB=30V
BVEBO VEB=4V
ICBO VCE/IC=3V/0.01A
IEBO VCE=5V , IE= -20mA , f=100MHz
hFE VCB=10V , IE=0A , f=1MHz
VCE(sat) IC=100ìA
fT IE=100ìA
Cob IC/IB=150mA/15mA
Min Typ Max Unit
50
V
50
V
5
V
0.5 ìA
0.5 ìA
120
390
0.4 V
250
MHz
6.5
pF
www.kexin.com.cn ¹