2SD1935_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
NPN Transistors
2SD1935
■ Features
● Large current capacity.
● Low collector to emitter saturation voltage.
● Complimentary to 2SB1295
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
Unit: mm
0.15 ^+0.02
-0.02
1. Base
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCBO
15
VCEO
15
V
VEBO
5
IC
800
mA
ICP
3
A
PC
200
mW
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， RBE= ∞
VEBO IE= 100μA， IC= 0
ICBO VCB= 12 V , IE= 0
IEBO VEB= 4V , IC=0
IC=5 mA, IB=0.5mA
VCE(sat)
IC=400 mA, IB=20mA
VBE(sat) IC=400 mA, IB=20mA
VCE= 2V, IC= 50mA
hFE
VCE= 2V, IC= 800mA
Cob VCB= 10V, IE=0,f=1MHz
fT
VCE= 2V, IC= 50mA
■ Classification of hfe(1)
Type
Range
Marking
2SD1935-CT5
135-270
CT5
2SD1935-CT6
200-400
CT6
2SD1935-CT7
300-600
CT7
2SD1935-CT8
450-900
CT8
Min Typ Max Unit
15
15
V
5
0.1
uA
0.1
10 25
mV
100 200
0.9 1.2 V
135
900
80
10
pF
200
MHz
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