2SD1935 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Epitaxial Planar Silicon Transistors

SMD Type
TransistIoCrs
NPN Epitaxial Planar Silicon Transistors
2SD1935
Features
Large current capacity.
Low collector to emitter saturation voltage.
Very small-sized package permitting sets to be made
smaller and slimer.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
15
V
VCEO
15
V
VEBO
5
V
IC
0.8
A
ICP
3
A
PC
200
mW
Tj
150
Tstg
-55 to +150
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-to-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Symbol
Testconditons
ICBO VCB = 12V , IE = 0
IEBO VEB = 4V , IC = 0
hFE VCE = 2V , IC = 50mA
fT VCE = 2V , IC = 50mA
Cob VCB = 10V , f = 1MHz
VCE(sat) IC = 5mA , IB = 0.5mA
VCE(sat) IC = 400mA , IB = 20mA
VBE(sat) IC = 400mA , IB =20mA
V(BR)CBO IC = 10ìA , IE = 0
V(BR)CEO ^{IC = 1mA , RBE =}
V(BR)EBO ^{IE = 10ìA , IC = 0}
Min Typ Max Unit
100 nA
100 nA
135
900
200
MHz
10
pF
10 25 mV
100 200 mV
0.9 1.2 V
15
V
15
V
5
V
hFE Classification
Marking
Rank
hFE
5
135 270
CT
6
7
200 400
300 600
8
450 900
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