2SD1918_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
NPN Transistors
2SD1918
■ Features
● High breakdown voltage.
● Low collector output capacitance.
● High transition frequency
● Complementary to 2SB1275
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
160
Collector - Emitter Voltage
VCEO
160
V
Emitter - Base Voltage
VEBO
5
Collector Current - Continuous
Collector Current - Pulse
IC
1.5
A
ICP
3
Collector Power Dissipation
Tc = 25℃
10
PC
W
Ta = 25℃
1
Junction Temperature
Storage Temperature Range
TJ
150
℃
Tstg
-55 to 150
Unit: mm
1 Base
2 Collector
3 Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 uA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100 uA， IC= 0
ICBO VCB= 120 V , IE= 0
IEBO VEB= 4V , IC=0
VCE(sat) IC=1 A, IB=100mA
VBE(sat) IC=1 A, IB=100mA
hFE VCE= 5V, IC= 100mA
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 5V, IE= -100 mA,f=1MHz
Min Typ Max Unit
160
160
V
5
1
uA
1
2
V
1.5
120
390
20
pF
80
MHz
■ Classification of hfe(1)
Type
2SD1918-Q
Range
120-270
2SD1918-R
180-390
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