2SD1918 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – Silicon NPN Epitaxial

SMD Type
Silicon NPN Epitaxial
2SD1918
Transistors
Features
High breakdown voltage.(BVCEO = 160V)
Low collector output capacitance.Typ. 20pF at VCB = 10V
High transition frequency.(fT = 80MHZ)
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
* Pw=200msec duty=1/2
TC = 25
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector to emitter saturation voltage *
Base to emitter voltage *
DC current transfer ratio
Transition frequency
Output capacitance
* Measured using pulse current.
hFE Classification
Rank
hFE
Q
120 to 270
R
180 to 390
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
160
160
5
1.5
3
1
10
150
-55 to +150
Unit
V
V
V
A(DC)
A(Pulse) *
W
W
1 Base
2 Collector
3 Emitter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
fT
Cob
Testconditons
IC = 50ìA
IC = 1mA
IE = 50ìA
VCB = 120V
VEB = 4V
IC/IB = 1A/0.1A
IC/IB = 1A/0.1A
VCE/IC = 5V/0.1A
VCE = 5V , IE = -0.1A , f = 30MHz
VCB = 10V , IE = 0A , f = 1MHz
Min Typ Max Unit
160
V
160
V
5
V
1 ìA
1 ìA
2
V
1.5 V
120
390
80
MHz
20
pF
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