2SD1899-Z Datasheet, PDF (1/2 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR MP-3

SMD Type
Transistors
NPN Silicon Epitaxial Transistor
2SD1899-Z
Features
Low VCE(sat).
High hFE.
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
7
V
Collector current (DC)
IC
3
A
Collector Current (pulse) *1
ICP
5
A
Base current
IB
0.5
A
Total power dissipation Ta = 25
PT *2
2
W
Total power dissipation TC = 25
PT
10
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
*1 Pulse Test PW 10ms, Duty Cycle 50%.
*2 Mounted on ceramic substrate of 7.5mm²x0.7mm
Unit: mm
1 Base
2 Collector
3 Emitter
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