2SD1823 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency amplification)

SMD Type
TransistIoCrs
Silicon NPN Epitaxial Planar Type
2SD1823
Features
High forward current transfer ratio hFE.
Low collector-emitter saturation voltage VCE(sat).
High emitter-base voltage VEBO.
Low noise voltage NV.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
50
V
VCEO
40
V
VEBO
15
V
IC
50
mA
ICP
100
mA
PC
150
mW
Tj
150
Tstg
-55 to +150
1 Emitter
2 Base
3 Collector
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector-base cutoff current
Collector-emitter cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Symbol
Testconditons
VCBO IC = 10 ìA, IE = 0
VCEO IC = 1 mA, IB = 0
VEBO IE = 10 ìA, IC = 0
ICBO VCB = 20 V, IE = 0
ICEO VCE = 20 V, IB = 0
hFE VCE = 10 V, IC = 2 mA
VCE(sat) IC = 10 mA, IB = 1 mA
fT VCB = 10 V, IE = ?2 mA, f = 200 MHz
Min Typ Max Unit
50
V
40
V
15
V
0.1 ìA
1 ìA
400
2000
0.05 0.20 V
120
MHz
hFE Classification
Marking
Rank
hFE
R
400 800
1Z
S
600 1200
T
1000 2000
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