2SD1821_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD1821
Transistors
■ Features
● Low Collector-to-Emitter Saturation Voltage
● Low noise voltage NV.
● Complementary to 2SB1220
1 Base
2 Emitter
3 Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCBO
150
VCEO
150
V
VEBO
5
IC
50
mA
ICP
100
PC
150
mW
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 100 V , IE= 0
IEBO VEB= 5V , IC=0
VCE(sat) IC=30mA, IB=3mA
VBE(sat) IC=30mA, IB=3mA
hFE VCE= 5V, IC= 10mA
Noise voltage
NV
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
Collector output capacitance
Transition frequency
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 10V, IE= -10 mA,f=200MHz
■ Classification of hfe
Type
2SD1821-R
Range
130-220
Marking
PR
2SD1821-S
185-330
PS
Min Typ Max Unit
150
150
V
5
1
uA
0.1
1
V
1.2
130
330
150
mV
2.3
pF
150
MHz
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