2SD1821 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification)

SMD Type
Transistors
Silicon NPN Epitaxial Planar Type
2SD1821
Features
High collector-emitter voltage VCEO
Low noise voltage NV
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
150
V
VCEO
150
V
VEBO
5
V
ICP
100
A
IC
50
A
PC
150
mW
Tj
150
Tstg
-55 to +150
1 Emitter
2 Base
3 Collector
Electrical Characteristics Ta = 25
Parameter
Collector-emitter voltage
Emitter-base voltage
Collector-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noixe voltage
Symbol
Testconditons
Min Typ Max Unit
VCEO IC = 100 ìA, IB = 0
150
V
VEBO IE = 10 ìA, IC = 0
5
V
ICBO VCB = 100 V, IE = 0
1 ìA
hFE VCE = 5 V, IC = 10 mA
130
330
VCE(sat) IC = 30 mA, IB = 3 mA
V
fT VCB = 10 V, IE = -10 mA, f = 200 MHz
150
MHz
Cob VCB = 10 V, IE = 0, f = 1 MHz
2.3
pF
VCE = 10 V, IC = 1 mA, GV = 80 dB, Rg
NV _{= 100KÙ, Function = FLAT}
150
mV
hFE Classification
Marking
Rank
hFE
P
Q
R
130 220
185 330
www.kexin.com.cn ¹