2SD1820A_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD1820A
Transistors
■ Features
● Low Collector-to-Emitter Saturation Voltage
● Complementary to 2SB1219A
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCBO
60
VCEO
50
V
VEBO
5
IC
0.5
A
ICP
1
PC
150
mW
TJ
150
℃
Tstg
-55 to 150
1 Base
2 Emitter
3 Collector
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 2 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 50 V , IE= 0
IEBO VEB= 5V , IC=0
VCE(sat) IC=300mA, IB=30mA
VBE(sat) IC=300mA, IB=30mA
hFE(1) VCE= 10V, IC= 150mA
hFE(2) VCE= 10V, IC= 500 mA
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 10V, IE= -50 mA,f=200MHz
Min Typ Max Unit
60
50
V
5
0.1
uA
0.1
0.35 0.6
V
1.2
85
340
40
6 15 pF
200
MHz
■ Classification of hfe(1)
Type
2SD1820A-Q
Range
85-175
Marking
XQ
2SD1820A-R
120-240
XR
2SD1820A-S
170-340
XS
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