2SD1820 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type

SMD Type
TransistIoCrs
Silicon NPN Epitaxial Planar Type
2SD1820
Features
Low collector-emitter saturation voltage VCE(sat).
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
30
V
VCEO
25
V
VEBO
5
V
IC
500
mA
ICP
1
A
PC
150
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Testconditons
VCBO IC = 10 ìA, IE = 0
VCEO IC = 2 mA, IB = 0
VEBO IE = 10 ìA, IC = 0
ICBO VCB = 20 V, IE = 0
hFE VCE = 10 V, IC = 150 mA
VCE(sat) IC = 300 mA, IB = 30 mA
fT VCB = 10 V, IE = -50 mA, f = 200 MHz
Cob VCB = 10 V, IE = 0, f = 1 MHz
Min Typ Max Unit
30
V
25
V
5
V
0.1 ìA
85
340
0.35 0.6 V
200
MHz
6 15 pF
hFE Classification
Marking
Rank
hFE
WQ
Q
85 170
WR
R
120 240
WS
S
170 340
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