2SD1819A_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD1819A
Transistors
■ Features
● Low Collector-to-Emitter Saturation Voltage
● High foward current transfer ratio hFE.
● Complementary to 2SB1218A
1 Base
2 Emitter
3 Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCBO
60
VCEO
50
V
VEBO
7
IC
100
mA
ICP
200
PC
150
mW
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector-emitter cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 2 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 50 V , IE= 0
ICEO VCE= 40 V , IB= 0
IEBO VEB= 6V , IC=0
VCE(sat) IC=100mA, IB=10mA
VBE(sat) IC=100mA, IB=10mA
hFE(1) VCE= 10V, IC= 2mA
hFE(2) VCE= 2V, IC= 100 mA
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 10V, IE= -2 mA,f=1MHz
■ Classification of hfe(1)
Type
2SD1819A-Q
Range
160-260
Marking
ZQ
2SD1819A-R
210-340
ZR
2SD1819A-S
290-460
ZS
Min Typ Max Unit
60
50
V
7
0.1
10 uA
0.1
0.1 0.3
V
1.2
160
460
90
3.5
pF
150
MHz
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