2SD1819A Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type

SMD Type
TransistIoCrs
Silicon NPN Epitaxial Planar Type
2SD1819A
Features
High foward current transfer ratio hFE.
Low collector to emitter saturation voltage VCE(sat).
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
60
V
VCEO
50
V
VEBO
7
V
ICP
200
mA
IC
100
mA
PC
150
mW
Tj
150
Tstg
-55 to +150
1 Emitter
2 Base
3 Collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Testconditons
ICBO VCB = 20V, IE = 0
ICEO VCE = 10V, IB = 0
VCBO IC = 10ìA, IE = 0
VCEO IC = 2mA, IB = 0
VEBO IE = 10ìA, IC = 0
hFE VCE = 10V, IC = 2mA
VCE(sat) IC = 100mA, IB = 10mA
fT VCB = 10V, IE =-2mA, f = 200MHz
Cob VCB = 10V, IE = 0, f = 1MHz
hFE Classification
Marking
Rank
hFE
ZQ
Q
160 260
ZR
R
210 340
ZS
S
290 460
Min Typ Max Unit
0.1 ìA
100 ìA
60
V
50
V
7
V
160
460
0.1 0.3 V
150
MHz
3.5
pF
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