2SD1816_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
NPN Transistors
2SD1816
■ Features
● Low Collector-to-Emitter Saturation Voltage
● Fast Switching Speed
● High fT.
● Complementary to 2SB1216
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
Unit: mm
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
1 Base
2 Collector
3 Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
Rating
120
100
6
4
8
1
150
-40 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Turn-on Time
Storage Time
Fall Time
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， RBE= ∞
VEBO IE= 100μA， IC= 0
ICBO VCB= 100 V , IE= 0
IEBO VEB= 5V , IC=0
VCE(sat) IC=2 A, IB=200mA
VBE(sat) IC=2 A, IB=200mA
hFE(1) VCE= 5V, IC= 500mA
hFE(2) VCE= 5V, IC= 3 A
ton
tstg
See Test Circuit
tf
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 10V, IC= 500 mA
■ Classification of hfe(1)
Type
Range
2SD1816-Q
70-140
2SD1816-R
100-200
2SD1816-S
140-280
2SD1816-T
200-400
Unit
V
A
W
℃
Min Typ Max Unit
120
100
V
6
1
uA
1
0.15 0.4
V
0.9 1.2
70
400
40
100
900
ns
50
40
pF
180
MHz
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