2SD1815_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
NPN Transistors
2SD1815
■ Features
● Low Collector-to-Emitter Saturation Voltage
● Fast Switching Speed
● High fT.
● Complementary to 2SB1215
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
Unit: mm
1 Base
2 Collector
3 Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCBO
120
VCEO
100
V
VEBO
6
IC
3
A
PC
1
W
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Turn-on time
Storage Time
Fall Time
Collector output capacitance
Transition frequency
Symbol
Test Conditions
Min Typ Max Unit
VCBO Ic= 100 μA， IE= 0
120
VCEO Ic= 1 mA， IB= 0
100
V
VEBO IE= 100μA， IC= 0
6
ICBO
IEBO
VCB= 100 V , IE= 0
VEB= 5V , IC=0
1
uA
1
VCE(sat) IC=1.5 A, IB=150mA
VBE(sat) IC=1.5 A, IB=150mA
0.4
V
1.2
hFE(1) VCE= 5V, IC= 500mA
70
400
hFE(2) VCE= 5V, IC= 2 A
40
ton
100
tstg VCC=50V,IC=1.5A, IB1=-IB2=-0.15A
900
ns
tf
50
Cob VCB= 10V, IE= 0,f=1MHz
25
pF
fT
VCE= 10V, IC= 500 mA
180
MHz
■ Classification of hfe(1)
Type
Range
2SD1815-Q
70-140
2SD1815-R
100-200
2SD1815-S
140-280
2SD1815-T
200-400
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