2SD1804_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
NPN Transistors
2SD1804
TO-252
Unit: mm
■ Features
● Low Collector-to-Emitter Saturation Voltage
● Fast Switching Speed
● High Current And High fT.
● Complementary to 2SB1204
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
■ Absolute Maximum Ratings Ta = 25℃
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
1 Base
2 Collector
3 Emitter
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
60
Collector - Emitter Voltage
VCEO
50
V
Emitter - Base Voltage
VEBO
6
Collector Current - Continuous
Collector Current - Pulse
IC
8
A
ICP
12
Collector Power Dissipation
Tc = 25℃
20
PC
W
Ta = 25℃
1
Junction Temperature
Storage Temperature Range
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Storage Time
Fall Time
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， RBE= ∞
VEBO IE= 100μA， IC= 0
ICBO VCB= 50 V , IE= 0
IEBO VEB= 5V , IC=0
VCE(sat) IC=4 A, IB=200mA
VBE(sat) IC=4 A, IB=200mA
hFE(1) VCE= 2V, IC= 500mA
hFE(2) VCE= 2V, IC= 6 A
tstg
See Test Circuit
tf
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 5V, IC= 1 A
Min Typ Max Unit
60
50
V
6
1
uA
1
0.2 0.4
V
0.95 1.3
70
400
35
500
ns
20
65
pF
180
MHz
■ Classification of hfe(1)
Type
2SD1804-Q
Range
70-140
2SD1804-R
100-200
2SD1804-S
140-280
2SD1804-T
200-400
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