2SD1803_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
NPN Transistors
2SD1803
TO-252
Unit: mm
■ Features
● Low Collector-to-Emitter Saturation Voltage
● Fast Switching Speed
● High Current And High fT.
● Complementary to 2SB1203
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Tc = 25℃
Ta = 25℃
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
Rating
Unit
60
50
V
6
5
A
8
20
W
1
150
℃
-40 to 150
1 Base
2 Collector
3 Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
VCBO Ic= 100 μA， IE= 0
Collector- emitter breakdown voltage
VCEO Ic= 1 mA， RBE= ∞
Emitter - base breakdown voltage
VEBO IE= 100μA， IC= 0
Collector-base cut-off current
ICBO VCB= 50 V , IE= 0
Emitter cut-off current
IEBO VEB= 5V , IC=0
Collector-emitter saturation voltage
VCE(sat) IC=3 A, IB=150mA
Base - emitter saturation voltage
VBE(sat) IC=3 A, IB=150mA
DC current gain
hFE(1)
hFE(2)
VCE= 2V, IC= 500mA
VCE= 2V, IC= 4 A
Turn-on Time
ton
Storage Time
tstg
See Test Circuit
Fall Time
tf
Collector output capacitance
Cob VCB= 10V, IE= 0,f=1MHz
Transition frequency
fT
VCE= 5V, IC= 1 A
■ Classification of hfe(1)
Type
2SD1803-Q
Range
70-140
2SD1803-R
100-200
2SD1803-S
140-280
2SD1803-T
200-400
Min Typ Max Unit
60
50
V
6
1
uA
1
0.22 0.4
V
0.95 1.3
70
400
35
50
500
ns
20
40
pF
180
MHz
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