2SD1781K Datasheet, PDF (1/1 Pages) Rohm – Medium Power Transistor (32V, 0.8A)

SMD Type
TransistIoCrs
Medium Power Transistor
2SD1781K
Features
Very Low VCE(sat).VCE(sat) = -0.1V(Typ.) IC / IB= 500mA / 50mA
High current capacity in compact package.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current *
Collector power dissipation
Junction temperature
Storage temperature
* Single pulse Pw=100ms.
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
Transition frequency
Symbol
Rating
Unit
VCBO
40
V
VCEO
32
V
VEBO
5
V
IC
0.8
A
ICP
1.5
PC
200
mW
Tj
150
Tstg
-55 to +150
Symbol
Testconditons
BVCBO IC=50ìA
BVCEO IC=1mA
BVEBO IE=50ìA
ICBO VCB=20V
IEBO VEB=4V
VCE(sat) IC/IB=500mA/50mA
hFE VCE=3V, IC=100mA
fT VCE=5V, IE= -50mA, f=100MHz
Cob VCB=10V, IE=0A, f=1MHz
hFE Classification
Marking
Rank
hFE
AF
Q
R
120 270
180 390
1.Base
2.Emitter
3.collector
Min Typ Max Unit
40
V
32
V
5
V
0.5 ìA
0.5 ìA
0.1 0.4 V
120
390
150
MHz
15
pF
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