2SD1766 Datasheet, PDF (1/1 Pages) Rohm – Medium Power Transistor (32V, 2A)

SMD Type
Medium Power Transistor
2SD1766
SOT-89
4.50+0.1
-0.1
1.80+0.1
-0.1
Transistors
Unit: mm
1.50^+0.1
-0.1
Features
Low VCE(sat), VCE(sat) = 0.5V (typical)
(IC = 2A, IB = 0.2A).
0.48+0.1
-0.1
0.53+0.1
-0.1
0.44+0.1
-0.1
3.00+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*1. Pw=20ms.
*2. 40 40 0.7mm Ceramic board.
Symbol
Rating
Unit
VCBO
40
V
VCEO
32
V
VEBO
5
V
IC
2
A
IC (Pulse) *¹
2.5
A
PC
0.5
W
PC *²
2
W
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
Testconditons
BVCBO IC=50ìA
BVCEO IC=1mA
BVEBO IE=50ìA
ICBO VCB=20V
IEBO VEB=4V
hFE VCE=3V,IC=0.5A
VCE(sat) IC=2A,IB=0.2A
fT VCE=5V, IE= -500mA, f=100MHz
Cob VCB=10V, IE=0A, f=1MHz
hFE Classification
Marking
Rank
hFE
P
82 180
DB
Q
120 270
R
180 390
1. Base
2. Collector
3. Emiitter
Min Typ Max Unit
40
V
32
V
5
V
1 ìA
1 ìA
82
390
0.5 0.8 V
100
MHz
30
pF
www.kexin.com.cn ¹