2SD1760_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD1760
Transistors
■ Features
● Low VCE (sat)
● Complementary to 2SB1184
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
Unit: mm
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Tc=25°C
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
Rating
Unit
60
50
V
5
3
A
4.5
15
W
150
℃
-55 to 150
1 Base
2 Collector
3 Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector Output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 uA， IE= 0
VCEO Ic= 1 mA，IB= 0
VEBO IE= 100 uA， IC= 0
ICBO VCB= 50 V , IE= 0
IEBO VEB= 4V , IC=0
VCE(sat) IC=2 A, IB=200 mA
VBE(sat) IC=2 A, IB=200 mA
hFE VCE= 3V, IC= 500 mA
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 5V, IE= -500mA,f=30MHz
Min Typ Max Unit
60
50
V
5
1
uA
1
0.5 1
V
1.2
120
390
40
pF
90
MHz
■ Classification of hfe
Type
Range
2SD1760-Q
120-270
2SD1760-R
180-390
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