2SD1758 Datasheet, PDF (1/1 Pages) TRANSYS Electronics Limited – Plastic-Encapsulated Transistors

SMD Type
Medium Power Transistor
2SD1758
Transistors
Features
Low VCE(sat), VCE(sat) = 0.5V
(IC = 2A, IB = 0.2A).
Epitaxial planar type
NPN silicon transistor
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse) *
Collector power dissipation
Junction temperature
Storage temperature
Tc = 25
* Pw=20ms.
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Symbol
Rating
Unit
VCBO
40
V
VCEO
32
V
VEBO
5
V
IC
2
A
ICP
2.5
A
1
W
PC
10
W
Tj
150
Tstg
-55 to +150
1 Base
2 Collector
3 Emitter
Symbol
Testconditons
BVCBO IC=50ìA
BVCEO IC=1mA
BVEBO IE=50ìA
ICBO VCB=20V
IEBO VEB=4V
hFE VCE=3V,IC=0.5A
VCE(sat) IC=2A,IB=0.2A
fT VCE=5V, IE= -500mA, f=100MHz
Cob VCB=10V, IE=0A, f=1MHz
Min Typ Max Unit
40
V
32
V
5
V
1 ìA
1 ìA
82
390
0.5 0.8 V
100
MHz
30
pF
hFE Classification
Rank
hFE
P
82 180
Q
120 270
R
180 390
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