2SD1746_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD1746
Transistors
TO-252
Unit: mm
■ Features
● Satisfactory linearity of foward current transfer ratio hFE
● Low collector to emitter saturation voltage VCE(sat)
● Large collector current IC
● Complementary to 2SB1176
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
1 Base
2 Collector
3 Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Tc=25°C
Ta=25°C
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCBO
130
VCEO
80
V
VEBO
7
IC
5
A
ICP
10
15
PC
W
1.3
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Turn-ON Time
Storage Time
Fall Time
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 uA， IE= 0
VCEO Ic= 10 mA，IB= 0
VEBO IE= 100 uA， IC= 0
ICBO VCB= 100 V , IE= 0
IEBO VEB= 6V , IC=0
VCE(sat) IC=2 A, IB=200 mA
VBE(sat) IC=2 A, IB=200 mA
VCE= 2V, IC= 100 mA
hFE
VCE= 2V, IC= 2 A
ton
tstg
IC = 2A, IB1 = 0.2A, IB2 = – 0.2A,
VCC = 50V
tf
fT
VCE= 10V, IC= 500mA,f=10MHz
Min Typ Max Unit
130
80
V
7
10
uA
50
0.5
V
1.5
45
90
260
0.5
1.5
us
0.15
30
MHz
■ Classification of hfe(2)
Type
Range
2SD1746-Q
90-180
2SD1746-P
130-260
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