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2SD1745_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors | |||
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SMD Type
NPN Transistors
2SD1745
Transistors
â Features
â Satisfactory linearity of foward current transfer ratio hFE
â Low collector to emitter saturation voltage VCE(sat)
â Large collector current IC
â Complementary to 2SB1175
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
Unit: mm
â Absolute Maximum Rating s Ta = 25â
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Tc=25°C
Ta=25°C
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
2.3
4 .60 +0.15
-0.15
0.60+ 0.1
- 0.1
Rating
Unit
130
80
V
7
4
A
8
15
W
1.3
150
â
-55 to 150
1 Base
2 Collector
3 Emitter
â Electrical Characteristics Ta = 25â
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Turn-ON Time
Storage Time
Fall Time
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 uAï¼ IE= 0
VCEO Ic= 10 mAï¼IB= 0
VEBO IE= 100 uAï¼ IC= 0
ICBO VCB= 100 V , IE= 0
IEBO VEB= 6V , IC=0
VCE(sat) IC=3 A, IB=150 mA
VBE(sat) IC=3 A, IB=150 mA
VCE= 2V, IC= 100 mA
hFE
VCE= 2V, IC= 1 A
ton
tstg
IC = 1A, IB1 = 0.1A, IB2 = â 0.1A,
VCC = 50V
tf
fT
VCE= 10V, IC= 500mA,f=10MHz
Min Typ Max Unit
130
80
V
7
10
uA
50
0.5
V
1.5
45
90
260
0.5
2.5
us
0.15
30
MHz
â Classification of hfe(2)
Type
2SD1745-Q
Range
90-180
2SD1745-P
130-260
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