2SD1742_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
NPN Transistors
2SD1742
TO-252
Unit: mm
■ Features
● High forward current transfer ratio hFE which
has satisfactory linearity
● Low collector to emitter saturation voltage VCE(sat)
● Complementary to 2SB1172
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Tc=25°C
Ta=25°C
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCBO
60
VCEO
60
V
VEBO
6
IC
3
A
ICP
5
15
PC
W
1.3
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
VCBO Ic= 100 uA， IE= 0
Collector- emitter breakdown voltage
VCEO Ic= 30 mA，IB= 0
Emitter - base breakdown voltage
VEBO IE= 100 uA， IC= 0
Collector-base cut-off current
ICBO VCB= 60 V , IE= 0
Collector-emitter cutoff current
ICES VCE = 60V, VBE = 0
Collector-emitter cutoff current
ICEO VCE = 30V, IB = 0
Emitter cut-off current
IEBO VEB= 6V , IC=0
Collector-emitter saturation voltage
VCE(sat) IC=3 A, IB=375 mA
Base - emitter saturation voltage
VBE(sat) IC=3 A, IB=375 mA
Base - emitter voltage
VBE VCE= 4V, IC= 3 A
DC current gain
VCE= 4V, IC= 1 A
hFE
VCE= 4V, IC= 3 A
Turn-ON Time
Storage Time
Fall Time
ton
tstg
IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V
tf
Transition frequency
fT
VCE= 10V, IC= 500mA,f=10MHz
■ Classification of hfe(1)
Type
2SD1742-Q
2SD1742-P
Range
70-150
120-250
Min Typ
60
60
6
70
10
0.5
2.5
0.4
30
1 Base
2 Collector
3 Emitter
Max Unit
V
0.1 mA
200
uA
300
0.1 mA
1.2
1.2 V
1.8
250
us
MHz
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