2SD1733 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – Power Transistor

SMD Type
Power Transistor
2SD1733
Transistors
Features
High VCEO, VCEO=80V .
High IC, IC=1A (DC) .
Good hFE linearity .
Low VCE (sat) .
Epitaxial planer type
NPN silicon transistor
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
* Pw=20ms.
Tc = 25
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Symbol
Rating
Unit
VCBO
120
V
VCEO
80
V
VEBO
5
V
IC
1
A
IC (Pulse) *
2
A
1
W
PC
10
W
Tj
150
Tstg
-55 to +150
1 Base
2 Collector
3 Emitter
Symbol
Testconditons
BVCBO IC=50ìA
BVCEO IC=1mA
BVEBO IE=50ìA
ICBO VCB=100V
IEBO VEB=4V
hFE VCE=3V,IC=0.5A
VCE(sat) IC=500mA,IB=20mA
fT VCE=10V, IE= -50mA, f=100MHz
Cob VCB=10V, IE=0A, f=1MHz
Min Typ Max Unit
120
V
80
V
5
V
1 ìA
1 ìA
82
390
0.15 0.4 V
100
MHz
20
pF
hFE Classification
Rank
hFE
P
82 180
Q
120 270
R
180 390
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