2SD1664_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD1664
Transistors
Features
Low VCE(sat)
Compliments to 2SB1132
1.70 0.1
0.42 0.1
0.46 0.1
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
32
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
(DC)
1
A
IC
PW=20ms, duty=1/2
2
A
Collector Power Dissipation
PC *
0.5
W
Jumction temperature
Tj
150
Storage temperature Range
Tstg
-55 to +150
* mounted on a 40x40x0.7mm ceramic board.
1.Base
2.Collector
3.Emitter
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 50 μA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 50μA
ICBO VCB= 20 V , IE= 0
IEBO VEB= 4V , IC=0
VCE(sat) IC=500 mA, IB=50mA
hFE VCE= 3V, IC= 100mA
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 5V, IC= -50mA,f=100MHz
Min Typ Max Unit
40
32
V
5
0.5
uA
0.5
0.15 0.4 V
82
390
15
pF
150
MHz
hFE Classification
Type
Range
Marking
2SD1664-P
82-180
DAP*
2SD1664-Q
120-270
DAQ*
2SD1664-R
180-390
DAR*
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