2SD1664 Datasheet, PDF (1/3 Pages) Rohm – Medium Power Transistor (32V, 1A)

SMD Type
Medium Power Transistor
2SD1664
Transistors
Features
Low VCE(sat)
Compliments to 2SB1132
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
32
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
(DC)
1
A
IC
PW=20ms, duty=1/2
2
A
Collector Power Dissipation
PC *
0.5
W
Jumction temperature
Tj
150
Storage temperature Range
Tstg
-55 to +150
* mounted on a 40x40x0.7mm ceramic board.
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-base Breakdown Voltage
Collector-emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Symbol
Testconditons
ICBO VCB = 20V , IE = 0
IEBO VEB = 4V , IC = 0
V(BR)CBO IC = 50uA , IE = 0
V(BR)CEO IC = 1mA , IB = 0
V(BR)EBO IE = 50uA
hFE VCE = -3V , IC = -0.1A
VCE(sat) IC = 500mA , IB = 50mA
fT VCE = 5V , IE = -50mA , f = 100MHz
Cob VCB = 10V , IE = 0 , f = 1MHz
Min Typ Max Unit
0.5 ìA
0.5 ìA
40
V
32
V
5
82
390
0.15 0.4 V
150
MHz
15
pF
hFE Classification
Marking
Rank
hFE
P
82 180
DA
Q
120 270
R
180 390
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