2SD1624_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD1624
Transistors
■ Features
● Low collector-to-emitter saturation voltage.
● Large current capacity and wide ASO.
● Fast switching speed.
● Complementary to 2SB1124
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
1.Base
2.Collector
3.Emitter
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
Collector - Emitter Voltage
VCBO
60
VCEO
50
V
Emitter - Base Voltage
VEBO
6
Collector Current - Continuous
Collector Current - Pulse
IC
3
A
ICP
6
Collector Power Dissipation
0.5
PC
W
(Note.1)
1.5
Junction Temperature
TJ
Storage Temperature Range
Tstg
Note.1:Mounted on ceramic board (250mm ² ×0.8mm)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
150
-55 to 150
Test Conditions
℃
Min Typ Max Unit
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
ICBO
IEBO
Ic= 100 uA， IE= 0
Ic= 1 mA，RBE= ∞
IE= 100 uA， IC= 0
VCB= 50 V , IE= 0
VEB= 4V , IC=0
60
50
V
6
1
uA
1
Collector-emitter saturation voltage
Base - emitter saturation voltage
VCE(sat) IC=2 A, IB=100 mA
VBE(sat) IC=2 A, IB=100 mA
0.19 0.5
V
1.2
DC current gain
VCE= 2V, IC= 100 mA
hFE
VCE= 2V, IC= 3 A
100
560
35
Turn-ON Time
Storage Time
ton
tstg
See specified Test Circuit.
70
650
ns
Fall Time
tf
35
Collector output capacitance
Cob VCB= 10V, IE= 0,f=1MHz
25
pF
Transition frequency
fT
VCE= 10V, IC= 50mA
150
MHz
■ Classification of hfe(1)
Type
2SD1624-R
2SD1624-S
2SD1624-T
2SD1624-U
Range
100-200
140-280
200-400
280-560
Marking
DG R*
DG S*
DG T*
DG U*
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