2SD1623_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD1623
Transistors
1.70 0.1
■ Features
● Low collector-to-emitter saturation voltage.
● Large current capacity and wide ASO.
● Fast switching speed.
● Complementary to 2SB1123
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
Collector - Emitter Voltage
VCBO
60
VCEO
50
V
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
VEBO
6
IC
2
A
ICP
4
Collector Power Dissipation
0.5
PC
W
(Note.1)
1.3
Junction Temperature
TJ
Storage Temperature Range
Tstg
Note.1:Mounted on ceramic board (250mm² ×0.8mm)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
150
-55 to 150
Test Conditions
℃
Min
Collector- base breakdown voltage
VCBO Ic= 100 uA， IE= 0
60
Collector- emitter breakdown voltage
VCEO Ic= 1 mA，RBE= ∞
50
Emitter - base breakdown voltage
VEBO IE= 100 uA， IC= 0
6
Collector-base cut-off current
ICBO VCB= 50 V , IE= 0
Emitter cut-off current
IEBO VEB= 4V , IC=0
Collector-emitter saturation voltage
VCE(sat) IC=1 A, IB=50 mA
Base - emitter saturation voltage
VBE(sat) IC=1 A, IB=50 mA
DC current gain
Turn-ON Time
Storage Time
VCE= 2V, IC= 100 mA
100
hFE
VCE= 2V, IC= 1.5 A
40
ton
tstg
See specified Test Circuit.
Fall Time
tf
Collector output capacitance
Transition frequency
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 10V, IC= 50mA
■ Classification of hfe(1)
Type
2SD1623-R
2SD1623-S
2SD1623-T
2SD1623-U
Range
100-200
140-280
200-400
280-560
Marking
DF R*
DF S*
DF T*
DF U*
1.Base
2.Collector
3.Emitter
Typ Max Unit
V
0.1
uA
0.1
0.15 0.4
V
0.9 1.2
560
60
550
ns
30
12
pF
150
MHz
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