2SD1623 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Epitaxial Planar Silicon Transistor

SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistor
2SD1623
Features
Adoption of FBET, MBIT processes.
Low collector-to-emitter saturation voltage.
Large current capacity and wide ASO.
Fast switching speed.
The ultraminiature package facilitates
higher-density mounting, thus allows the applied
hybrid IC’s further miniaturization.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
2
A
Collector current (pulse)
ICP
4
A
Collector dissipation
PC
0.5
W
PC *
1.3
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* Mounted on ceramic board(250mm2X0.8mm)
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