2SD1622_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD1622
Transistors
■ Features
● Very small size making it easy to provide highdensity,
small-sized hybrid IC’s.
● Complementary to 2SB1122
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Collector - Base Voltage
VCBO
60
Collector - Emitter Voltage
VCEO
50
Emitter - Base Voltage
VEBO
5
Collector Current - Continuous
IC
1
Collector Current - Pulse
ICP
2
Collector Power Dissipation
(Note.1)
0.5
PC
1.3
Junction Temperature
TJ
150
Storage Temperature Range
Tstg
-55 to 150
Note.1:Mounted on ceramic board (250mm ² ×0.8mm)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
VCBO Ic= 100 uA， IE= 0
Collector- emitter breakdown voltage
VCEO Ic= 1 mA，RBE= ∞
Emitter - base breakdown voltage
VEBO IE= 100 uA， IC= 0
Collector-base cut-off current
ICBO VCB= 50 V , IE= 0
Emitter cut-off current
IEBO VEB= 4V , IC=0
Collector-emitter saturation voltage
VCE(sat) IC=500 mA, IB=50 mA
Base - emitter saturation voltage
VBE(sat) IC=500 mA, IB=50 mA
DC current gain
VCE= 2V, IC= 100 mA
hFE
VCE= 2V, IC= 1 A
Turn-ON Time
ton
Storage Time
tstg
See specified Test Circuit.
Fall Time
tf
Collector output capacitance
Cob VCB= 10V, IE= 0,f=1MHz
Transition frequency
fT
VCE= 10V, IC= 50mA
Unit
V
A
W
℃
Min
60
50
5
100
30
■ Classification of hfe(1)
Type
2SD1622-R
2SD1622-S
2SD1622-T
2SD1622-U
Range
100-200
140-280
200-400
280-560
Marking
DE R*
DE S*
DE T*
DE U*
1.Base
2.Collector
3.Emitter
Typ Max Unit
V
0.1
uA
0.1
0.12 0.3
V
0.9 1.2
560
40
350
ns
30
8.5
pF
150
MHz
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