2SD1622 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Epitaxial Planar Silicon Transistor

SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistor
2SD1622
Features
Adoption of FBET process..
Very small size making it easy to provide highdensity
hybrid IC’s.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
1
A
Collector current (pulse)
ICP
2
A
Collector dissipation
PC
500
mW
PC *
1.3
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* Mounted on ceramic board(250mm2X0.8mm)
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