2SD1621_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD1621
Transistors
■ Features
● Low collector-to-emitter saturation voltage.
● Large current capacity and wide ASO.
● Fast switching speed.
● Complementary transistor with the 2SB1121
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector current -pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Turn-on time
Storage time
Turn-off time
Collector output capacitance
Transition frequency
■ Classification of hfe(1)
Type
2SD1621-R
Range
Marking
100-200
DDR
2SD1621-S
140-280
DDS
Symbol
Rating
Unit
VCBO
30
VCEO
25
V
VEBO
6
IC
2
A
ICP
5
PC
500
mW
TJ
150
℃
Tstg
-55 to 150
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， RBE= ∞
VEBO IE= 100μA， IC= 0
ICBO VCB= 20V , IE= 0
IEBO VEB= 4V , IC=0
VCE(sat) IC=1.5A, IB=75mA
VBE(sat) IC=1.5A, IB=75mA
VCE= 2V, IC= 100mA
hFE
VCE= 2V, IC= 1.5A
ton
tstg See specified Test Circuit.
toff
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 10V, IC= 50mA
2SD1621-T
200-400
DDT
2SD1621-U
280-560
DDU
1.Base
2.Collector
3.Emitter
Min Typ Max Unit
30
25
V
6
0.1
uA
0.1
0.18 0.4
V
0.85 1.2
100
560
65
60
500
ns
25
19
pF
150
MHz
www.kexin.com.cn ¹