2SD1620 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – 1.5V,3V Strobe Applications

SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistor
2SD1620
Features
Less power dissipation because of low VCE(sat),
permitting more flashes of light to be emitted.
Large current capacity and highly resistant to breakdown.
Excellent linearity of hFE in the region from low
current to high current.
Ultrasmall size supports high-density, ultrasmallsized
hybrid IC designs.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
25
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
3
A
Collector current (pulse)
ICP
5
A
Collector dissipation
PC
500
mW
PC *
1.3
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* Mounted on ceramic board(250mm2×0.8mm)
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Symbol
Testconditons
ICBO VCB = 20 V, IE=0
IEBO VEB = 4 V, IC=0
hFE VCE = 2 V , IC = 3 A
fT VCE = 10 V , IC = 50 mA
Cob VCB = 10 V , f = 1.0MHz
VCE(sat) IC = 3 A , IB = 60 mA
V(BR)CBO IC = 10ìA , IE = 0
V(BR)CEX IC = 1mA , VBE = 3 V
V(BR)CEO IC = 1mA , RBE =
V(BR)EBO IE = 10ìA , IC = 0
Min Typ Max Unit
100 nA
100 nA
140 210
200
MHz
30
pF
0.3 0.4 V
30
V
20
V
10
V
6
V
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