2SD1619_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD1619
Transistors
■ Features
● Very small size making it easy to provide highdensity,
small-sized hybrid IC’s.
● Complementary to 2SB1119
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Collector - Base Voltage
VCBO
Collector - Emitter Voltage
VCEO
Emitter - Base Voltage
VEBO
Collector Current - Continuous
IC
Collector Current - Pulse
ICP
Collector Power Dissipation
PC
(Note.1)
Junction Temperature
TJ
Storage Temperature Range
Tstg
Note.1:Mounted on ceramic board (250mm² ×0.8mm)
Rating
25
25
5
1
2
0.5
1.3
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 uA， IE= 0
VCEO Ic= 1 mA，RBE= ∞
VEBO IE= 100 uA， IC= 0
ICBO VCB= 20 V , IE= 0
IEBO VEB= 4V , IC=0
VCE(sat) IC=500 mA, IB=50 mA
VBE(sat) IC=500 mA, IB=50 mA
VCE= 2V, IC= 50 mA
hFE
VCE= 2V, IC= 1 A
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 10V, IC= 50mA
■ Classification of hfe(1)
Type
Range
Marking
2SD1619-R
100-200
DB R*
2SD1619-S
140-280
DB S*
2SD1619-T
200-400
DB T*
2SD1619-U
280-560
DB U*
1.Base
2.Collector
3.Emitter
Unit
V
A
W
℃
Min Typ Max Unit
25
25
V
5
0.1
uA
0.1
0.1 0.3
V
0.85 1.2
100
560
40
15
pF
180
MHz
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