2SD1618_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD1618
Transistors
■ Features
● Low collector-to-emitter saturation voltage.
● Very small size making it easy to provide highdensity,
small-sized hybrid IC’s.
● Complementary to 2SB1118
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Collector - Base Voltage
VCBO
20
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
VCEO
15
VEBO
5
IC
0.7
Collector Current - Pulse
ICP
1.5
Collector Power Dissipation
(Note.1)
0.5
PC
1.3
Junction Temperature
Storage Temperature Range
TJ
150
Tstg
-55 to 150
Note.1:Mounted on ceramic board (250mm ² ×0.8mm)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
VCBO
VCEO
VEBO
ICBO
IEBO
VCE(sat)
Ic= 100 uA， IE= 0
Ic= 1 mA，RBE= ∞
IE= 100 uA， IC= 0
VCB= 15 V , IE= 0
VEB= 4V , IC=0
IC=5 mA, IB=0.5 mA
IC=100 mA, IB=10 mA
Base - emitter saturation voltage
VBE(sat) IC=100 mA, IB=10 mA
DC current gain
Collector output capacitance
VCE= 2V, IC= 50 mA
hFE
VCE= 2V, IC= 500 mA
Cob VCB= 10V, IE= 0,f=1MHz
Transition frequency
■ Classification of hfe(1)
fT
VCE= 10V, IC= 50mA
Type
2SD1618-S
2SD1618-T
2SD1618-U
Range
140-280
200-400
280-560
Marking
DA S*
DA T*
DA U*
1.Base
2.Collector
3.Emitter
Unit
V
A
W
℃
Min Typ Max Unit
20
15
V
5
0.1
uA
0.1
10 25
mV
30 80
0.8 1.2 V
140
560
60
8
pF
250
MHz
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