2SD1615A_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD1615A
Transistors
■ Features
● Low VCE(sat)
● Complementary to 2SB1115A
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
(Note.1)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Note.1:PW ≤ 10 ms, Duty cycle ≤ 20%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
Rating
120
60
6
1
2
2
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 uA， IE= 0
VCEO Ic= 1 mA，IB= 0
VEBO IE= 100 uA， IC= 0
ICBO VCB= 120 V , IE= 0
IEBO VEB= 6V , IC=0
VCE(sat) IC=1 A, IB=50 mA
VBE(sat) IC=1 A, IB=50 mA
VBE VCE= 2V, IC= 50 mA
VCE= 2V, IC= 100 mA
hFE
VCE= 2V, IC= 1 A
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 2V, IE= -100mA
■ Classification of hfe(1)
Type
2SD1615A-Q
Range
135-270
Marking
GQ
2SD1615A-P
200-400
GP
1.Base
2.Collector
3.Emitter
Unit
V
A
W
℃
Min Typ Max Unit
120
60
V
6
0.1
uA
0.1
0.15 0.3
0.9 1.2 V
0.6
0.7
135
400
81 270
19
pF
80 160
MHz
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