2SD1614_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD1614
Transistors
■ Features
● High DC Current Gain:hFE 135 to 600.
● Low VCE(sat)
● Complementary to 2SB1114
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
(Note.1)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Note.1:PW ≤ 10 ms, Duty cycle ≤ 20%.
■ Electrical Characteristics Ta = 25℃
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
Rating
40
20
6
2
3
2
150
-55 to 150
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 uA， IE= 0
VCEO Ic= 1 mA，IB= 0
VEBO IE= 100 uA， IC= 0
ICBO VCB= 40 V , IE= 0
IEBO VEB= 6V , IC=0
VCE(sat) IC=2 A, IB=50 mA
VBE(sat) IC=2 A, IB=50 mA
VBE VCE= 6V, IC= 100 mA
VCE= 2V, IC= 100 mA
hFE
VCE= 2V, IC= 2 A
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 10V, IE= -50mA
■ Classification of hfe(1)
Type
2SD1614-M
Range
135-270
Marking
XM
2SD1614-L
200-400
XL
2SD1614-K
300-600
XK
1.Base
2.Collector
3.Emitter
Unit
V
A
W
℃
Min Typ Max Unit
40
20
V
6
0.1
uA
0.1
0.3 0.5
0.95 1.2 V
0.65 0.68 0.75
135 350 600
40
28
pF
200
MHz
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