2SD1614 Datasheet, PDF (1/1 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

SMD Type
Transistors
NPN Silicon Epitaxial Transistor
2SD1614
Features
World standard miniature package.
High dc current gain.
Low VCE(sat).
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
6
V
Collector current (DC)
IC
2
A
Collector Current (pulse) *
IC
3
A
Total power dissipation
PT
2.0
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* Pulse Test PW 10ms, Duty Cycle 50%.
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base saturation voltage *
Base-emitter voltage *
Gain bandwidth product
Output capacitance
* Pulsed: PW 350 ìs, duty cycle 2%
Symbol
Testconditons
ICBO VCB = 30 V, IE = 0 A
IEBO VEB = 6.0 V, IC = 0 A
hFE VCE = 2.0 V, IC = 100 mA
VCE(sat) IC = 2 A, IB = 50 mA
VBE(sat) IC = 2 A, IB = 50 mA
VBE VCE = 6.0 V, IC = 100 mA
fT VCE = 10 V, IE = -50 mA
Cob VCB = 10 V, IE = 0, f = 1.0 MHz
hFE Classification
Marking
hFE
XM
135 270
XL
200 400
XK
300 600
Min Typ Max Unit
100 nA
100 nA
135 350 600
0.3 0.5 V
0.95 1.2 V
650 680 750 mV
200
MHz
28
pF
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