2SD1419_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD1419
Transistors
■ Features
● Low frequency power amplifier
● Complementary to 2SB1026
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
(Note.1)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
Rating
120
100
5
1
2
1
150
-55 to 150
Note.1:PW ≤ 10 ms, Duty cycle ≤ 20%.
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 uA， IE= 0
VCEO Ic= 1 mA，RBE= ∞
VEBO IE= 100 uA， IC= 0
ICBO VCB= 100 V , IE= 0
IEBO VEB= 5V , IC=0
VCE(sat) IC=500 mA, IB=50 mA
VBE(sat) IC=500 mA, IB=50 mA
VBE VCE= 5V, IC= 150 mA
VCE= 5V, IC= 150 mA
hFE
VCE= 5V, IC= 500 mA
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 5V, IC= 150mA
■ Classification of hfe(1)
Type
Range
Marking
2SD1419-D
60-120
DD
2SD1419-E
100-200
DE
1.Base
2.Collector
3.Emitter
Unit
V
A
W
℃
Min Typ Max Unit
120
100
V
5
10
uA
0.1
1
1.2 V
1.5
60
200
30
12
pF
140
MHz
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