2SD1368_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD1368
Transistors
■ Features
● Low frequency power amplifier
● Complementary to 2SB1002
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
(Note.1)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Note.1:PW ≤ 10 ms, Duty cycle ≤ 20%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
Rating
100
50
6
1
1.5
1
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 uA， IE= 0
VCEO Ic= 1 mA，RBE= ∞
VEBO IE= 100 uA， IC= 0
ICBO VCB= 80 V , IE= 0
IEBO VEB= 5V , IC=0
VCE(sat) IC=1 A, IB=100mA
VBE(sat) IC=1 A, IB=100mA
hFE VCE= 2V, IC= 0.1 A
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 2V, IC= 10mA
■ Classification of hfe
Type
Range
Marking
2SD1368-A
100-200
CA
2SD1368-B
160-320
CB
2SD1368-C
250-500
CC
1.Base
2.Collector
3.Emitter
Unit
V
A
W
℃
Min Typ Max Unit
100
50
V
6
0.1
uA
0.1
0.3
V
1.2
100
500
20
pF
100
MHz
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