2SD1366_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD1366
Transistors
■ Features
● Low frequency power amplifier
● Complementary to 2SB1000
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse (Note.1)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Note.1:PW ≤ 10 ms, Duty cycle ≤ 20%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
Rating
25
20
5
1
1.5
1
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 uA， IE= 0
VCEO Ic= 1 mA， RBE=∞
VEBO IE= 100 uA， IC= 0
ICBO VCB= 20 V , IE= 0
IEBO VEB= 4V , IC=0
VCE(sat) IC=800 mA, IB=80mA
VBE(sat) IC=800 mA, IB=80mA
hFE VCE= 2V, IC= 0.5 A
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 2V, IC= 500mA
■ Classification of hfe
Type
2SD1366-A
Range
85-170
Marking
AA
2SD1366-B
120-240
AB
1.Base
2.Collector
3.Emitter
Unit
V
A
W
℃
Min Typ Max Unit
25
20
V
5
0.1
uA
0.1
0.15 0.3
V
0.9 1
85
240
22
pF
240
MHz
www.kexin.com.cn ¹