2SD1280_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD1280
Transistors
■ Features
● Satisfactory operation performances at high efficiency with the
low-voltage power supply.
● Low collector to emitter saturation voltage VCE(sat)
● Complementary to 2SB956
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCBO
20
VCEO
20
V
VEBO
5
IC
1
A
ICP
2
PC
1
W
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
VCBO
VCEO
VEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE(1)
hFE(2)
Cob
fT
Test Conditions
Ic= 100 μA， IE= 0
Ic= 1 mA， IB= 0
IE= 100μA， IC= 0
VCB= 20 V , IE= 0
VEB= 5V , IC=0
IC=1 A, IB=50mA
IC=500 mA, IB=50mA
VCE= 2V, IC= 500mA
VCE= 2V, IC= 1.5 A
VCB = 6V, IE = 0, f = 1MHz
VCE= 6V, IE= -50mA,f=200MHz
Min Typ Max Unit
20
20
V
5
1
uA
1
0.5
V
1.2
90 150 360
50 100
18
pF
150
MHz
■ Classification of hfe(1)
Type
Range
Marking
2SD1280-Q
90-155
RQ
2SD1280-R
130-210
RR
2SD1280-S
180-280
RS
2SD1280-T
250-360
RT
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