2SD1280 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-voltage type medium output power amplification)

SMD Type
Transistors
Silicon NPN Epitaxial Planar Type
2SD1280
Features
Low collector-emitter saturation voltage VCE(sat).
Satisfactory operation performances at high efficiency
with the lowvoltage power supply.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
20
V
VCEO
20
V
VEBO
5
V
IC
1
A
ICP
2
A
PC
1
W
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector-emitter voltage
Emitter-base voltage
Collector-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Testconditons
VCEO IC = 1 mA, IB = 0
VEBO IE = 10 ìA, IC = 0
ICBO VCB = 10 V, IB = 0
VCE = 2 V, IC = 0.5 A
hFE
VCE = 2 V, IC = 1.5 A
VCE(sat) IC = 1 A, IB = 50 mA
VBE(sat) IC = 500 mA, IB = 50 mA
fT VCB = 6 V, IE = -50 mA, f = 200 MHz
Cob VCB = 6 V, IE = 0, f = 1 MHz
Min Typ Max Unit
20
V
5
V
1 ìA
90
280
50
0.5 V
1.2 V
150
MHz
18
pF
hFE Classification
Marking
Rank
hFE
Q
90 155
R
R
130 210
S
180 280
www.kexin.com.cn ¹