2SD1257_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD1257
Transistors
■ Features
● Satisfactory linearity of foward current transfer ratio hFE
● Low collector to emitter saturation voltage VCE(sat)
● Large collector current IC
● Complementary to 2SB934
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
Unit: mm
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
1 Base
2 Collector
3 Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
130
Collector - Emitter Voltage
VCEO
80
V
Emitter - Base Voltage
VEBO
7
Collector Current - Continuous
Collector Current - Pulse
IC
7
A
ICP
15
Collector Power Dissipation
Tc = 25℃
40
PC
W
Ta = 25℃
1.3
Junction Temperature
Storage Temperature Range
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
VCBO Ic= 100 μA， IE= 0
Collector- emitter breakdown voltage
VCEO Ic= 10 mA， IB= 0
Emitter - base breakdown voltage
VEBO IE= 100μA， IC= 0
Collector-base cut-off current
ICBO VCB= 100 V , IE= 0
Emitter cut-off current
IEBO VEB= 5V , IC=0
Collector-emitter saturation voltage
VCE(sat) IC=5 A, IB=250mA
Base - emitter saturation voltage
VBE(sat) IC=5 A, IB=250mA
DC current gain
hFE(1)
hFE(2)
VCE= 2V, IC= 100mA
VCE= 2V, IC= 3 A
Turn-on time
Storage time
Fall time
ton
tstg
IC = 3A, IB1 = 300mA, IB2 = –
300mA, VCC = 50V
tf
Transition frequency
fT
VCE= 10V, IC= 500mA,f=10MHz
■ Classification of hfe(2)
Type
2SD1257-R
2SD1257-Q
2SD1257-P
Range
60-120
90-180
130-260
Min Typ Max Unit
130
80
V
7
10
uA
50
0.5
V
1.5
45
60
260
0.5
1.5
us
0.1
30
MHz
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