2SD1255_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD1255
Transistors
■ Features
● High forward current transfer ratio hFE
which has satisfactory linearity
● Low collector to emitter saturation voltage VCE(sat)
● Large collector current IC
● Complementary to 2SB932
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
Unit: mm
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
1 Base
2 Collector
3 Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
Collector - Emitter Voltage
VCBO
130
VCEO
80
V
Emitter - Base Voltage
VEBO
7
Collector Current - Continuous
Collector Current - Pulse
IC
4
A
ICP
8
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Tc = 25℃
Ta = 25℃
35
PC
W
1.3
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Turn-on time
Storage time
Fall time
Transition frequency
Symbol
Test Conditions
Min Typ Max Unit
VCBO Ic= 100 μA， IE= 0
130
VCEO Ic= 10 mA， IB= 0
80
V
VEBO IE= 100μA， IC= 0
7
ICBO
IEBO
VCB= 100 V , IE= 0
VEB= 5V , IC=0
10
uA
50
VCE(sat) IC=3 A, IB=150mA
VBE(sat) IC=3 A, IB=150mA
0.5
V
1.5
hFE(1) VCE= 2V, IC= 100mA
45
hFE(2) VCE= 2V, IC= 1 A
90
260
ton
0.15
tstg
IC = 1A, IB1 = 100mA, IB2 = –100mA
VCC = 50V
0.8
us
tf
0.15
fT
VCE= 10V, IC= 500mA,f=10MHz
30
MHz
■ Classification of hfe(2)
Type
2SD1255-Q
Range
90-180
2SD1255-P
130-260
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