2SD1254_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SD1254
Transistors
TO-252
Unit: mm
■ Features
● High forward current transfer ratio hFE
which has satisfactory linearity
● Low collector to emitter saturation voltage VCE(sat)
● Large collector current IC
● Complementary to 2SB931
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Tc = 25℃
Ta = 25℃
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
Rating
Unit
130
80
V
7
3
A
6
30
W
1.3
150
℃
-55 to 150
1 Base
2 Collector
3 Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector- base breakdown voltage
Collector- emitter breakdown voltage
VCBO
VCEO
Ic= 100 μA， IE= 0
Ic= 10 mA， IB= 0
130
80
V
Emitter - base breakdown voltage
VEBO IE= 100μA， IC= 0
7
Collector-base cut-off current
Emitter cut-off current
ICBO
IEBO
VCB= 100 V , IE= 0
VEB= 5V , IC=0
10
uA
50
Collector-emitter saturation voltage
Base - emitter saturation voltage
VCE(sat) IC=2 A, IB=100mA
VBE(sat) IC=2 A, IB=100mA
0.5
V
1.5
DC current gain
hFE(1)
hFE(2)
VCE= 2V, IC= 100mA
VCE= 2V, IC= 500mA
45
60
260
Turn-on time
Storage time
Fall time
ton
0.5
tstg
IC = 0.5A, IB1 = 50mA, IB2 = – 50mA,
VCC = 50V
2.5
us
tf
0.15
Transition frequency
fT
VCE= 10V, IC= 500mA,f=10MHz
30
MHz
■ Classification of hfe(2)
Type
2SD1254-R
Range
60-120
2SD1254-Q
90-180
2SD1254-P
130-260
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