2SD1253_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
NPN Transistors
2SD1253
■ Features
● High forward current transfer ratio hFE
which has satisfactory linearity
● Low collector to emitter saturation voltage VCE(sat)
● Complementary to 2SB930
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
Unit: mm
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Collector - Base Voltage
VCBO
60
Collector - Emitter Voltage
VCEO
60
Emitter - Base Voltage
VEBO
5
Collector Current - Continuous
IC
4
Collector Current - Pulse
ICP
8
Collector Power Dissipation
Tc = 25℃
40
PC
Ta = 25℃
1.3
Junction Temperature
TJ
150
Storage Temperature Range
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
VCBO Ic= 100 μA， IE= 0
Collector- emitter breakdown voltage
VCEO Ic= 30 mA， IB= 0
Emitter - base breakdown voltage
VEBO IE= 100μA， IC= 0
Collector-base cut-off current
ICBO VCB= 60 V , IE= 0
Collector cutoff current
ICES VCB= 60 V , IE= 0
Collector cutoff current
ICEO VCB= 30 V , IE= 0
Emitter cut-off current
IEBO VEB= 5V , IC=0
Collector-emitter saturation voltage
VCE(sat) IC=4 A, IB=400mA
Base - emitter saturation voltage
VBE(sat) IC=4 A, IB=400mA
Base - emitte voltage
VBE VCE= 4V, IC= 3 A
DC current gain
hFE(1)
hFE(2)
VCE= 4V, IC= 1A
VCE= 4V, IC= 3A
Turn-on time
Storage time
Fall time
ton
tstg
IC = 4A, IB1 = 0.4A, IB2 = – 0.4A,
VCC = 50V
tf
Transition frequency
■ Classification of hfe(1)
fT VCE= 5V, IC= 500mA,f=10MHz
Type
2SD1253-R
2SD1253-Q 2SD1253-P
Marking
40-90
70-150
120-250
Unit
V
A
W
℃
Min
60
60
5
40
15
1 Base
2 Collector
3 Emitter
Typ Max Unit
V
0.1 mA
400
uA
700
0.1 mA
1.5
1.2 V
2
250
0.4
1.2
us
0.5
20
MHz
www.kexin.com.cn ¹