2SD1253 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For power amplification)

SMD Type
Transistors
Silicon NPN Triple Diffusion Planar Type
2SD1253,2SD1253A
Features
High forward current transfer ratio hFE which has satisfactory linearity.
Low collector to emitter saturation voltage VCE(sat).
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SD1253
60
V
VCBO
2SD1253A
80
V
Collector-emitter voltage
2SD1253
60
V
VCEO
2SD1253A
80
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
4
A
Peak collector current
ICP
8
A
Collector power dissipation
Ta = 25
Tc = 25
1.3
PC
W
40
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
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